2001. 3. 22 1/2 semiconductor technical data KTD1028 epitaxial planar npn transistor revision no : 2 high current application. features high dc current gain : h fe =800 3200 (v ce =5.0v, i c =300ma). wide area of safe operation. low collector saturation voltage. : v ce(sat) =0.17v (i c =500ma, i b =5.0ma). maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 8 v collector current i c 1.0 a collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 100 na emitter cut-off current i ebo v eb =8v, i c =0 - - 100 na dc current gain h fe (1) (note) v ce =5.0v, i c =300ma 800 1500 3200 h fe (2) v ce =5.0v, i c =1.0a 400 - - collector-emitter saturration voltage v ce(sat) i c =500ma, i b =5.0ma - 0.17 0.30 v base-emitter saturation voltage v be(sat) i c =500ma, i b =5.0ma - 0.80 1.2 v collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - 18 30 pf transition frequency f t v ce =10v, i c =500ma 150 250 - mhz base-emitter voltage v be v ce =5v, i c =100ma - 630 700 mv note: h fe classification a:800 1600, b:1200 2400, c:2000 3200
2001. 3. 22 2/2 KTD1028 revision no : 2 h - i c collector current i (a) 10m fe dc current gain h 50 dc current gain h fe collector current i (a) c h - i v c collector current i (a) 0.01 0.03 be(sat) v (v) i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) fe c 30m 100m 300m 1 3 10 5 100 300 500 1k 3k 5k 10k v =10v ce ce v =5.0v ce v =2.0v fe c 10k 5k 3k 1k 500 300 100 510 3 1 300m 100m 30m 50 10m v =5.0v ce ta=75 c ta=25 c ta=-25 c ce(sat) c be(sat) v - i base-emitter saturation voltage collector-emitter saturation voltage v (v) ce(sat) 0.03 0.1 0.3 1 3 10 0.01 0.1 0.3 1 3 10 v : i /i =2 0 be(sat) b c 50 20 v c e(sat) i /i =100 c b 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 pulsed 10 m a 5m a 4 ma 3ma 2 m a i =1ma b 6ma 7ma 8ma 9ma collector power dissipation 0 c 0 ambient temperature ta ( c) c p - ta p (mw) 40 80 120 160 200 200 400 600 800 1k 1.2k
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